| PART |
Description |
Maker |
| ADR370BRT-R2 ADR370ART-R2 |
Precision Low Power 2.048 V SOT-23 Voltage Reference
|
Analog Devices, Inc.
|
| ADR380 ADR380ART-REEL ADR380ART-REEL7 ADR381 ADR38 |
2.048 V and 2.5 V Bandgap Voltage References
2.048 V Bandgap Voltage Reference
Precision Low-Drift 2.048 V/2.500 V SOT-23 Voltage References
|
AD[Analog Devices]
|
| ADR390ART-RL ADR390ART-RL7 ADR395BUJZ-REEL7 ADR390 |
Precision Low Drift 2.048 V/2.5 V/4.096 V/ 5.0 V SOT-23 Reference with Shutdown
|
AD[Analog Devices]
|
| HY51VS18163HG HY51V18163HGT-6 HY51V18163HGJ HY51V1 |
Dynamic RAM organized 1,048,576 words x 16bit, 50ns, low power
Dynamic RAM organized 1,048,576 words x 16bit, self refresh, 70ns, low power
Dynamic RAM organized 1,048,576 words x 16bit, self refresh, 60ns, low power
Dynamic RAM organized 1,048,576 words x 16bit, self refresh, 50ns, low power
1M x 16Bit EDO DRAM 100万16 EDO公司的DRAM
1M x 16Bit EDO DRAM 1M X 16 EDO DRAM, 50 ns, PDSO44
1M x 16Bit EDO DRAM 1M X 16 EDO DRAM, 60 ns, PDSO44
Dynamic RAM organized 1,048,576 words x 16bit, 60ns, low power
Dynamic RAM organized 1,048,576 words x 16bit, 70ns, low power
|
HYNIX[Hynix Semiconductor]
Hynix Semiconductor, Inc.
|
| GM71C4403E-80 GM71C4403ELJ-80 GM71C4403E-60 GM71C4 |
MC 41C 27#20 14#16 PIN PLUG
MB 41C 27#20 14#16 SKT PLUG
Single Output LDO, 1.0A, Adj.(1.295 to 5.5V), Low Noise, Fast Transient Response 6-SOT-223 -40 to 85
MB 41C 27#20 14#16 PIN PLUG 1,048,576字×位组织
1,048,576 Words x Bit Organization 1,048,576字×位组织
|
LG Corp.
LG, Corp.
|
| MSM538001E MSM538001E-XXGS-K MSM538001E-XXRS |
1,048,576字8位MASKROM
From old datasheet system
1,048,576-Word x 8-Bit MASKROM
|
OKI SEMICONDUCTOR CO., LTD.
|
| MSM512200L-80SJ MSM512200L-60SJ MSM512200L-60TS-K |
1,048,576-Word X 2-Bit DYNAMIC RAM : FAST PAGE MODE TYPE 1,048,576字2位动态随机存储器：快速页面模式型
|
OKI SEMICONDUCTOR CO., LTD.
|
| MSM514400E-60SJ MSM514400E-60TS-K MSM514400EL-XXTS |
1,048,576-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE 1,048,576字4位动态随机存储器：快速页面模式型
|
OKI SEMICONDUCTOR CO., LTD.
OKI[OKI electronic componets]
|
| MSM51V4400E MSM51V4400E-10 MSM51V4400E-70 |
1,048,576-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE 1,048,576字4位动态随机存储器：快速页面模式型
|
OKI SEMICONDUCTOR CO., LTD.
OKI electronic componets
|
| UPC1945 UPC1945TA UPC1945TA-E1 UPC1945TA-E2 |
Low-voltage-compatible high-precision variable-shunt type stabilization power
ADJUSTABLE PRECISION SHUNT REGULATORS
|
NEC[NEC]
NEC Corp.
|
| IDT6116 IDT6116LA IDT6116LA120D IDT6116LA120DB IDT |
Enhanced JFET Precision Operational Amplifier 8-PDIP 0 to 70 的CMOS静态RAM 16K的（2K × 8位）
Quad Enhanced JFET Low-Power Precision Operational Amplifier 14-PDIP -40 to 85 2K X 8 STANDARD SRAM, 20 ns, PDIP24
CMOS STATIC RAM 16K (2K x 8 BIT) 2K X 8 STANDARD SRAM, 20 ns, PDIP24
Enhanced-JFET Low-Power Low-Offset Quad Operational Amplifier 14-PDIP -40 to 85 2K X 8 STANDARD SRAM, 35 ns, PDIP24
TRANS NPN 80VCEO 1A MT-3 的CMOS静态RAM 16K的（2K × 8位）
Dual Enhanced JFET Precision Operational Amplifier 8-SOIC -40 to 85 的CMOS静态RAM 16K的（2K × 8位）
CMOS STATIC RAM 16K (2K x 8 BIT) 2K X 8 STANDARD SRAM, 25 ns, PDIP24
CMOS STATIC RAM 16K (2K x 8 BIT) 2K X 8 STANDARD SRAM, 120 ns, CDIP24
CMOS STATIC RAM 16K (2K x 8 BIT) 2K X 8 STANDARD SRAM, 25 ns, CDIP24
CMOS STATIC RAM 16K (2K x 8 BIT) 2K X 8 STANDARD SRAM, 35 ns, CDIP24
TRANS NPN LF 50VCEO .1A SS-MINI 的CMOS静态RAM 16K的（2K × 8位）
20 characters x 2 Lines, 5x7 Dot Matric Character and Cursor 的CMOS静态RAM 16K的（2K × 8位）
Dual Enhanced JFET Low-Power Precision Operational Amplifier 8-PDIP -40 to 85 2K X 8 STANDARD SRAM, 45 ns, CDIP24
CMOS STATIC RAM 16K (2K x 8 BIT) 2K X 8 STANDARD SRAM, 45 ns, PDSO24
CMOS STATIC RAM 16K (2K x 8 BIT) 2K X 8 STANDARD SRAM, 45 ns, PDIP24
Dual Enhanced JFET Low-Power Precision Operational Amplifier 8-PDIP -40 to 85 2K X 8 STANDARD SRAM, 45 ns, PDIP24
CMOS STATIC RAM 16K (2K x 8 BIT) 2K X 8 STANDARD SRAM, 45 ns, CDIP24
Enhanced-JFET Low-Power Low-Offset Quad Operational Amplifier 14-SOIC 0 to 70 的CMOS静态RAM 16K的（2K × 8位）
CMOS STATIC RAM 16K (2K x 8 BIT) 的CMOS静态RAM 16K的（2K × 8位）
Enhanced-JFET Low-Power Low-Offset Dual Operational Amplifier 8-PDIP 0 to 70
Dual Enhanced JFET Low-Power Precision Operational Amplifier 8-SO 0 to 70
Enhanced-JFET Precision Operational Amplifier 8-SOIC 0 to 70
Enhanced-JFET Low-Power Low-Offset Dual Operational Amplifier 8-SOIC 0 to 70
CABLE SMA-RA/SMA-RA 36 RG-58
Quad Enhanced JFET Low-Power Precision Operational Amplifier 14-PDIP 0 to 70
Quad Enhanced JFET Low-Power Precision Operational Amplifier 14-SO 0 to 70
CABLE SMA/BNC 12 RG-142
Quad Enhanced JFET Low-Power Precision Operational Amplifier 14-SOIC -40 to 85
Enhanced-JFET Low-Power Low-Offset Quad Operational Amplifier 14-PDIP 0 to 70
Enhanced JFET Precision Operational Amplifier 8-SOIC 0 to 70
Dual Enhanced JFET Low-Power Precision Operational Amplifier 8-SOIC -40 to 85
Dual Enhanced JFET Low-Power Precision Operational Amplifier 8-SOIC 0 to 70
|
INTEGRATED DEVICE TECHNOLOGY INC
AME, Inc.
Integrated Device Technology, Inc.
IDT[Integrated Device Technology]
|
| TC514402J TC514402J-10 TC514402J-80 TC514402Z-10 T |
1,048,576 x 4 BIT DYNAMIC RAM 1,048,576 × 4位动态随机存储器
MB 3C 3#16 PIN RECP 1,048,576 × 4位动态随机存储器
MB 10C 10#20 PIN RECP 1,048,576 × 4位动态随机存储器
|
Toshiba, Corp.
Maxim Integrated Products, Inc.
Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
|
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